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K6X1008T2D Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
History
Initial draft
Draft Data
July 15, 2002
Remark
Preliminary
0.1
Revised - Deleted 32-TSOP1-0820R, 32-TSOP1-0813.4F/R Package Type. - Added Commercial product. - Added 55ns product( Vcc = 3.0V~3.6V) Revised - Added Lead Free 32-SOP-525 Product - Added Lead Free 32-TSOP1-0820F Product Finalized - Changed ICC from 3mA to 2mA - Changed ICC2 from 25mA to 20mA - Changed ISB1(Commercial) from 10A to 6A - Changed ISB1(industrial) from 10A to 6A - Changed ISB1(Automotive) from 20A to 10A - Changed IDR(Commercial) from 10A to 6A - Changed IDR(industrial) from 10A to 6A - Changed IDR(Automotive) from 20A to 10A
December 4, 2002
Preliminary
0.2
June 23, 2003
Preliminary
1.0
September 16, 2003
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
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Revision 1.0 September 2003
K6X1008T2D Family
FEATURES
* Process Technology: Full CMOS * Organization: 128K x 8 * Power Supply Voltage: 2.7~3.6V * Low Data Retention Voltage: 1.5V(Min) * Three state outputs * Package Type: 32-SOP-525, 32-TSOP1-0820F 32-SOP-525, 32-TSOP1-0820F
CMOS SRAM
GENERAL DESCRIPTION
The K6X1008T2D families are fabricated by SAMSUNGs advanced CMOS process technology. The families support verious operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
128Kx8 bit Super Low Power and Low Voltage full CMOS Static RAM
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Vcc Range Speed Standby Operating (ISB1, Max) (ICC2, Max) 6A 20mA 702)/85ns 10A PKG Type
K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q
Commercial(0~70C) 551)/702)/85ns Industrial(-40~85C) Automotive(-40~125C) 2.7~3.6V
32-SOP-525 32-TSOP1-0820F 32-SOP-525 32-TSOP1-0820F
1. This parameter is measured in the voltage range of 3.0V~3.6V with 30pF test load. 2. This parameter is measured with 30pF test load.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
Clk gen. Precharge circuit.
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26
VCC A15 CS2 WE A13 A8 A9 A11 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 A11 A9 A8 A13 WE CS2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3
Row Addresses
Row select
Memory array
32-SOP
25 24 23 22 21 20 19 18 17
32-TSOP Type1-Forward
I/O1 I/O8
Data cont
I/O Circuit Column select
Data cont Column Addresses
Name A0~A16 WE CS1,CS2 OE I/O1~I/O8 Vcc Vss NC
Function Address Inputs Write Enable Input Chip Select Input Output Enable Input Data Inputs/Outputs Power Ground No Connection
CS1 CS2 WE OE
Control logic
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. 2
Revision 1.0 September 2003
K6X1008T2D Family
PRODUCT LIST
Commercial Products(0~70C) Part Name
K6X1008T2D-GB551) K6X1008T2D-GB70 K6X1008T2D-GB85 K6X1008T2D-TB551) K6X1008T2D-TB70 K6X1008T2D-TB85 K6X1008T2D-BB551,2) K6X1008T2D-BB702) K6X1008T2D-BB852) K6X1008T2D-PB551,2) K6X1008T2D-PB702) K6X1008T2D-PB852)
CMOS SRAM
Industrial Products(-40~85C) Part Name
K6X1008T2D-GF551) K6X1008T2D-GF70 K6X1008T2D-GF85 K6X1008T2D-TF551) K6X1008T2D-TF70 K6X1008T2D-TF85 K6X1008T2D-BF551,2) K6X1008T2D-BF702) K6X1008T2D-BF852) K6X1008T2D-PF551,2) K6X1008T2D-PF702) K6X1008T2D-PF852)
Atomotive Products(-40~125C) Part Name
K6X1008T2D-GQ70 K6X1008T2D-GQ85 K6X1008T2D-TQ70 K6X1008T2D-TQ85
Function
32-SOP, 55ns, LL 32-SOP, 70ns, LL 32-SOP, 85ns, LL 32-TSOP-F, 55ns, LL 32-TSOP-F, 70ns, LL 32-TSOP-F, 85ns, LL 32-SOP, 55ns, LL 32-SOP, 70ns, LL 32-SOP, 85ns, LL 32-TSOP-F, 55ns, LL 32-TSOP-F, 70ns, LL 32-TSOP-F, 85ns, LL
Function
32-SOP, 55ns, LL 32-SOP, 70ns, LL 32-SOP, 85ns, LL 32-TSOP-F, 55ns, LL 32-TSOP-F, 70ns, LL 32-TSOP-F, 85ns, LL 32-SOP, 55ns, LL 32-SOP, 70ns, LL 32-SOP, 85ns, LL 32-TSOP-F, 55ns, LL 32-TSOP-F, 70ns, LL 32-TSOP-F, 85ns, LL
Function
32-SOP, 70ns, L 32-SOP, 85ns, L 32-TSOP-F, 70ns, L 32-TSOP-F, 85ns, L
1. Operating voltage range is 3.0V~3.6V 2. Lead Free Product
FUNCTIONAL DESCRIPTION
CS1 H X1) L L L CS2 X
1)
OE X
1)
WE X
1)
I/O High-Z High-Z High-Z Dout Din
Mode Deselected Deselected Output Disabled Read Write
Power Standby Standby Active Active Active
L H H H
X1) H L X1)
X1) H H L
1. X means dont care (Must be in high or low states)
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Operating Temperature Symbol VIN,VOUT VCC PD TSTG TA Ratings -0.2 to VCC+0.3V(Max. 3.9V) -0.2 to 3.9 1.0 -65 to 150 0 to 70 -40 to 85 -40 to 125 Unit V V W C C C C Remark K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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K6X1008T2D Family
RECOMMENDED DC OPERATING CONDITIONS1)
Item Supply voltage Ground Input high voltage Input low voltage Symbol Vcc Vss VIH VIL Min 2.7 0 2.2 -0.2
3)
CMOS SRAM
Typ 3.0/3.3 0 -
Max 3.6 0 Vcc+0.2 0.6
2)
Unit V V V V
Note: 1. Commercial Product: TA=0 to 70C, Otherwise specified . Industrial Product: TA=-40 to 85C, Otherwise specified Automotive Product: TA=-40 to 125C, Otherwise specified 2. Overshoot: Vcc+3.0V in case of pulse width30ns. 3. Undershoot: -3.0V in case of pulse width30ns. 4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f=1MHz, TA=25C)
Item Input capacitance Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol CIN CIO
Test Condition VIN=0V VIO=0V
Min -
Max 8 10
Unit pF pF
DC AND OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current Operating power supply current Symbol ILI ILO ICC ICC1 Average operating current ICC2 Output low voltage Output high voltage Standby Current(TTL) Standby Current(CMOS) VOL VOH ISB ISB1 VIN=Vss to Vcc CS1=VIH or CS2=VIL or OE=VIH or WE=VIL, VIO=Vss to Vcc IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL, Read Cycle time=1s, 100%duty, IIO=0mA, CS10.2V, CS2Vcc-0.2V, VIN0.2V or VINVCC-0.2V Cycle time=Min, 100% duty, IIO=0mA, CS1=VIL, CS2=VIH, VIN=VIH or VIL IOL=2.1mA IOH=-1.0mA CS1=VIH, CS2=VIL, Other inputs=VIH or VIL CS1Vcc-0.2V, CS2Vcc-0.2V or CS20.2V, Other inputs=0~Vcc K6X1008T2D-B K6X1008T2D-F K6X1008T2D-Q Test Conditions Min Typ Max Unit -1 -1 2.4 1 1 2 3 20 0.4 0.3 6 6 10 A A mA mA mA V V mA A A A
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K6X1008T2D Family
AC OPERATING CONDITIONS
TEST CONDITIONS( Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V Input rising and falling time: 5ns Input and output reference voltage:1.5V Output load(see right): CL=100pF+1TTL CL=30pF+1TTL CL1)
CMOS SRAM
1. Including scope and jig capacitance
AC CHARACTERISTICS
(VCC=2.7~3.6V, Commercial product:TA=0 to 70C, Industrial product:TA=-40 to 85C, Automotive product:TA=-40 to 125C ) Speed Bins Parameter List Symbol 55ns1) Min Read Cycle Time Address Access Time Chip Select to Output Output Enable to Valid Output Read Chip Select to Low-Z Output Output Enable to Low-Z Output Chip Disable to High-Z Output Output Disable to High-Z Output Output Hold from Address Change Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write Write Write Pulse Width Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End Write to Output Low-Z tRC tAA tCO tOE tLZ tOLZ tHZ tOHZ tOH tWC tCW tAS tAW tWP tWR tWHZ tDW tDH tOW 55 10 5 0 0 10 55 45 0 45 40 0 0 20 0 5 Max 55 55 25 25 25 25 Min 70 10 5 0 0 10 70 60 0 60 50 0 0 25 0 5 70ns Max 70 70 35 25 25 25 Min 85 10 5 0 0 15 85 70 0 70 60 0 0 35 0 5 85ns Max 85 85 40 25 25 30 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Units
1. Voltage range is 3.0V~3.6V for commercial and industrial product.
DATA RETENTION CHARACTERISTICS
Item Vcc for data retention Data retention current Symbol VDR IDR CS1Vcc-0.2V1) K6X1008T2D-B Vcc=3.0V, CS1Vcc-0.2V1) K6X1008T2D-F K6X1008T2D-Q Data retention set-up time Recovery time tSDR tRDR See data retention waveform 0 5 Test Condition Min 2.0 Typ Max 3.6 6 6 10 Unit V A A A ms
1. CS1Vcc-0.2V, CS2VCC-0.2V, or CS20.2V
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Revision 1.0 September 2003
K6X1008T2D Family
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH)
tRC Address tOH Data Out Previous Data Valid tAA
CMOS SRAM
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
tRC Address tAA tCO1 CS1 tHZ(1,2) CS2 tCO2 tOE tOH
OE tOLZ tLZ Data Valid tOHZ
Data out
NOTES (READ CYCLE)
High-Z
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection.
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Revision 1.0 September 2003
K6X1008T2D Family
TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)
tWC Address tCW(2) CS1 tAW CS2 tCW(2) tWP(1) WE tAS(3) Data in tWHZ Data out Data Undefined tDW Data Valid tOW tDH tWR(4)
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1
Controlled)
tWC Address tAS(3) CS1 tAW CS2 tWP(1) WE tDW Data in Data Valid tDH tCW(2) tWR(4)
Data out
High-Z
High-Z
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Revision 1.0 September 2003
K6X1008T2D Family
TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 Controlled)
tWC Address tAS(3) CS1 tAW CS2 tCW(2) tWP(1) tDW Data in Data Valid tDH tCW(2) tWR(4)
CMOS SRAM
WE
Data out
NOTES (WRITE CYCLE)
High-Z
High-Z
1. A write occurs during the overlap of a low CS1, a high CS2 and a low WE. A write begins at the latest transition among CS1 goes low, CS2 going high and WE going low: A write end at the earliest transition among CS1 going high, CS2 going low and WE going high, tWP is measured from the begining of write to the end of write. 2. tCW is measured from the CS1 going low or CS2 going high to the end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS1 or WE going high tWR2 applied in case a write ends as CS2 going to low.
DATA RETENTION WAVE FORM
CS1 controlled
VCC 2.7V tSDR Data Retention Mode tRDR
2.2V VDR CSVCC - 0.2V
CS1 GND
CS2 controlled
VCC 2.7V CS2 tSDR
Data Retention Mode
tRDR
VDR 0.4V GND CS20.2V
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Revision 1.0 September 2003
K6X1008T2D Family
PACKAGE DIMENSIONS
32 PLASTIC SMALL OUTLINE PACKAGE (525mil)
CMOS SRAM
Units: millimeters(inches)
0~8 #32 #17
14.120.30 0.5560.012
11.430.20 0.4500.008
#1 20.87 MAX 0.822 20.470.20 0.8060.008
#16 2.740.20 0.1080.008 3.00 0.118 MAX
13.34 0.525
0.20 +0.10 -0.05 0.008+0.004 -0.002
0.800.20 0.0310.008
0.10 MAX 0.004 MAX
+0.100 -0.050 +0.004 0.016 -0.002
( 0.71 ) 0.028
0.41
1.27 0.050
0.05 0.002 MIN
32 PIN THIN SMALL OUTLINE PACKAGE TYPE I (0820F)
0.20
+0.10 -0.05
0.008+0.004 -0.002 #1
20.000.20 0.7870.008 #32 ( 8.40 0.331 MAX 8.00 0.315 0.25 ) 0.010
0.50 0.0197
#16
#17 1.000.10 0.0390.004 1.20 0.047 MAX 0.15
+0.10 -0.05
0.05 0.002 MIN
0.25 0.010 TYP
18.400.10 0.7240.004
0~8
0.45 ~0.75 0.018 ~0.030
(
0.50 ) 0.020
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Revision 1.0 September 2003
0.10 MAX 0.004 MAX
0.006+0.004 -0.002

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